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dc.contributor.authorKurniawan, Agus
dc.contributor.authorHadi, Syamsul
dc.contributor.authorArifin, Zainal
dc.contributor.authorUbaidillah
dc.contributor.authorSuyitno
dc.date.accessioned2014-12-02T06:09:23Z
dc.date.available2014-12-02T06:09:23Z
dc.date.issued2014-12-04
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Liu, et al., "Properties of Cu and V co-doped ZnO nanoparticles annealed in different atmospheres," Superlattices and Microstructures, vol. 52, pp. 1171-1177, 2012. [44] L. Zhang, et al., "Fabrication and Propeties of p-type K Doped Zn1xMgxO Thin Film," Journal of Alloys and Compounds, vol. 509, pp. 7405-7409, 2011.en_US
dc.identifier.issn2407-4330
dc.identifier.urihttp://hdl.handle.net/11617/4948
dc.description.abstractZinc Oxide (ZnO) is a one of interesting materials to be developed as semiconductor materials because of its advantages for many applications, while research about Cu doped ZnO in the pellet form is seldom. This research aims to synthesize the material for p-type thermoelectric semiconductor of ZnxCu1-xO and to obtain the thermal conductivity as a one of important material characteristic of thermoelectric semiconductor. Zinc nitrate tetra hydrate as a raw material was mixed with copper nitrate trihidrate, dried, calcined, and compacted to be a pellet form finally. Furthermore, the sintering process was conducted at temperature from 1,100oC to 1,500 C. The thermal conductivity was measured using steady state method. The highest thermal conductivity of 3.14 W/mK was obtained by which sintering temperature of 1,300 C and operational temperature of 450 o C.en_US
dc.publisherUniversitas Muhammadiyah Surakartaen_US
dc.subjectSemiconductor material p-typeen_US
dc.subjectthermal conductivityen_US
dc.subjectthermoelectricen_US
dc.subjectCu doped ZnOen_US
dc.titleEffect of Sintering Temperature to The Thermal Conductivity of Cu doped ZnOen_US
dc.typeArticleen_US


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