Proses Deep Etching Material Kuningan
| dc.contributor.author | Riyadi, Tri Widodo Besar | |
| dc.contributor.author | Asmoro, Sigit | |
| dc.contributor.author | Nugraha, Nurmuntaha Agung | |
| dc.date.accessioned | 2016-10-21T09:33:13Z | |
| dc.date.available | 2016-10-21T09:33:13Z | |
| dc.date.issued | 2016-08-27 | |
| dc.identifier.citation | [1] M. Bauhuber, A. Mikrievskij, and A. Lechner, “Isotropic wet chemical etching of deep channels with optical surface quality in silicon with HNA based etching solutions,” Mater. Sci. Semicond. Process., vol. 16, no. 6, pp. 1428–1433, 2013. [2] O. Çakır, “Chemical etching of aluminium,” J. Mater. Process. Technol., vol. 199, no. 1–3, pp. 337– 340, 2008. [3] C. Ban, Y. He, X. Shao, and J. Du, “Effect of pretreatment on electrochemical etching behavior of Al foil in HCl–H 2 SO 4 ,” Trans. Nonferrous Met. Soc. China, vol. 23, no. 4, pp. 1039–1045, 2013. [4] C. Pakpum and P. Limsuwan, “A deep AlTiC dry etching for fabrication of Burnish and Glide slider head,” Procedia Eng., vol. 32, pp. 1037–1042, 2012. [5] G. Hu, H. Zhang, W. Di, and T. Zhao, “Study on Wet Etching of AAO Template,” Carbon Nanotub., vol. 1, no. 2, pp. 78–82, 2004. [6] W. Lin, G. C. Tu, C. F. Lin, and Y. M. Peng, “The effect of lead impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usage,” Corros. Sci., vol. 38, no. 9, pp. 889–907, 1996. [7] N. Khamnualthong, K. Siangchaew, and P. Limsuwan, “Study of chromium hard mask formation and wall angle control for deep etching application,” Procedia Eng., vol. 32, pp. 922–928, 2012. [8] A Ivanov and U. Mescheder, “Dynamic Simulation of Electrochemical Etching of Silicon,” Proceeding 2012 COMSOL, 2012. | in_ID |
| dc.identifier.issn | 2407-9189 | |
| dc.identifier.uri | http://hdl.handle.net/11617/7749 | |
| dc.description.abstract | Deep etching has been developed as one of the micromachining techniques used to fabricate small appliances such as robotic components for medical applications. An electric energy is sometimes used to accelerate the etching process. The objective of this work was to study the effect of electrical current on the material removal rate and wall profiles in the deep etching process of brass. The etching solution was composed of ferric chloride and aquadest, whereas the variations of electrical current for the etching were 0.09 A, 0.12 A, 0.15 A, 0.30 A, and 0.35 A. The result showed that the increase of the electrical current increased the etched mass. The increase of the material removal rate obtained from the experiment was close to that obtained from the theoretical calculation. The experimental result showed more detailed information of the etched wall profile, where an increase in the electrical current increased the surface depth, and the side wall tent to form a curve shaped with the same radii. | in_ID |
| dc.language.iso | id | in_ID |
| dc.publisher | STIKES Muhammadiyah Pekajangan | in_ID |
| dc.subject | Deep etching | in_ID |
| dc.subject | Brass | in_ID |
| dc.subject | Electrical currents | in_ID |
| dc.subject | Material removal rates | in_ID |
| dc.subject | Wall profiles | in_ID |
| dc.title | Proses Deep Etching Material Kuningan | in_ID |
| dc.type | Article | in_ID |
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