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dc.contributor.authorRiyadi, Tri Widodo Besar
dc.contributor.authorAndryono, Kevin
dc.contributor.authorFatchurrahman, Muhammad
dc.date.accessioned2016-02-24T07:26:39Z
dc.date.available2016-02-24T07:26:39Z
dc.date.issued2016-02
dc.identifier.citationM. Bauhuber, A. Mikr ie vskij, a nd A. Lechner, “Isotropic wet che mica l etching of deep channe ls w ith optica l s urface qua lity in silic on w ith HNA based etching solutions ,” Mater. Sc i. Semic ond. Process., vol. 16, no. 6, pp. 1428–1433, 2013. O. Çakır , “Che mica l etching of aluminium,” J. Mater. Process. Technol. , vol. 199, no. 1– 3, pp. 337–340, 2008. C. Ban, Y. He, X. Shao, and J. Du, “Effect of pretreatment on e lectr oche mica l etching behavior of A l foil in H C l–H2SO4,” Trans. Nonferrous Met. Soc. China , vol. 23, no. 4, pp. 1039–1045, 2013. C. Pakpum a nd P. Lims uwan, “A deep A lTiC dry etc hing f or fabr ication of Bur nis h and Glide s lider hea d,” Procedia Eng. , vol. 32, pp. 1037– 1042, 2012. G. Hu, H. Zhang, W. Di, and T. Zhao, “Study on Wet Etching of AAO Te mplate ,” Carbon Na notub., vol. 1, no. 2, pp. 78– 82, 2004. W. Lin, G. C. Tu, C. F. Lin, and Y. M. Peng, “The effect of lead impur ity on the DC- etching beha viour of a luminum foil f or electr olytic capac itor usa ge,” Corr os. Sc i., vol. 38, no. 9, pp. 889–907, 1996. N. Khamnua lthong, K. Sia ngchaew, and P. Lims uwan, “Study of chromium har d mask f or mation and wa ll angle contr ol for deep etching application,” Procedia Eng., vol. 32, pp. 922–928, 2012. A Ivanov and U. Mesche der, “D ynamic Simula tion of Electroc hemica l Etching of Silic on,” Proceeding 2012 COMSOL, 2012.in_ID
dc.identifier.issn2407-9189
dc.identifier.urihttp://hdl.handle.net/11617/6717
dc.description.abstractThe objective of this work was to investigate the effect of electrical current on the material removal rate an d wall profile in the deep etching process of aluminum alloy. The etching solution was composed of na trium chloride, copper sulfate and aquadest, whereas the current variations used for the etching were 0, 1.6, 2.1, 3, 3.5 and 5 Ampere. The result shows that the etched mass increased as the increase of the current. However, the material removal rate ob tained from the experiment increased more gradually compa red with that obtained from the theoretical calculation . The micrograph of the wall profile shows that an increase in the current has increa sed the su rface depth, an d the side wall tent to fo rm a curve shap ed with the same ra dii.in_ID
dc.language.isoidin_ID
dc.publisherLPPM STIKES Muhammadiyah Kudusin_ID
dc.subjectDeep etchingin_ID
dc.subjectcurrentsin_ID
dc.subjectmaterial removal ratesin_ID
dc.subjectwall profilein_ID
dc.titleStudi Kecepatan Pengikisan Material dan Profil Dinding pada Proses Deep Etchingin_ID
dc.typeArticlein_ID


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